Перегляд за автором "Galchinetskii, L.P."

Сортувати за: Порядок: Результатів:

  • Crystals Cd₁₋x ZnxTe – a promising material for non-cryogenic semiconductor detectors: preparations, structure defectness and electrophysical properties 
    Atroshchenko, L.V.; Galkin, S.N.; Galchinetskii, L.P.; Lalayants, A.I.; Rybalka, I.A.; Ryzhikov, V.D.; Silin, V.I.; Starzhinskii, N.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Relationship between preparation conditions of the raw charge, crucible material, growth regimes and structure defectness and electrophysical properties of crystals Cd₁₋x ZnxTe has been studied. The crystals were grown ...
  • Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes 
    Katrunov, K.A.; Galchinetskii, L.P.; Grinyov, B.V.; Starzhinskiy, N.G.; Bendeberya, G.N.; Bondarenko, E.A. (Functional Materials, 2008)
    Effect of technology parameters on the quality of nZnSe(X)/Nl Schottky's surface barrier structure used as components of UV photosensitive detectors are studied. Both the spectrum and the total sensitivity of photodiodes ...
  • Small-grained detector of ionizing radiation based on ZnSe(Te) 
    Volkov, V.G.; Gavrilyuk, V.P.; Galchinetskii, L.P.; Grinyov, B.V.; Katrunov, K.A.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    A highly efficient ZnSe(Te) scintillation detector combined with Si-photodiode has been developed. A conglomerate made up of ZnSe(Te) grains is used as a scintillator. Optimal shape of the grains, reflecting cover and ...